| PART |
Description |
Maker |
| CHV2707-QJ CHV2707-QJ-0G0T CHV2707-QJ-0G00 PB-CHV2 |
700 to 800 MHz InGaP HBT 5W Linear Power Amplifier 70000兆赫的InGaP HBT 5W线性功率放大器
|
Mimix Broadband, Inc.
|
| PB-CGB7009-SC-0000 PB-CGB7009-SP-0000 |
DC-6.0 GHz InGaP HBT, MMIC or Packaged, Matched Gain Block Amplifier 直流6.0千兆赫的InGaP HBT，MMIC的或包装，匹配增益模块放大器
|
Mimix Broadband, Inc.
|
| MGR2018CT_D ON1880 MGR2018CT |
Power Manager Gallium Arsenide Power Rectifier
From old datasheet system
GALLIUM ARSENIDE RECTIFIER 20 AMPERES 180 VOLTS
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| MGRB2018CT_D ON1883 MGRB2018CT MGRB2018 |
Power Manager Gallium Arsenide Power Rectifier
From old datasheet system
GALLIUM ARSENIDE RECTIFIER 20 AMPERES 180 VOLTS
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| ATF-10236 ATF-10236-STR ATF-10236-TR1 ATF10236 |
ER 2C 2#16S PIN RECP BOX
0.5?12 GHz Low Noise Gallium Arsenide FET
0.5-12 GHz Low Noise Gallium Arsenide FET
0.512 GHz Low Noise Gallium Arsenide FET
|
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| TQ7125 |
824-849 MHz, Cellular AMPS/TDMA Power Amp IC-HBT
3V HBT TDMA Power Amplifier IC
|
TriQuint Semiconductor
|
| DGS20-022A DGSK40-025A DGS20-025A DGSK40-022A |
250V gallium arsenide schottky rectifier
220V gallium arsenide schottky rectifier
|
IXYS[IXYS Corporation]
|
| ATF-10736 ATF-10736-STR ATF-10736-TR1 ATF-10736-TR |
0.5-12 GHz General Purpose Gallium Arsenide FET
0.5?12 GHz General Purpose Gallium Arsenide FET
0.512 GHz General Purpose Gallium Arsenide FET
|
Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
|
| CGB240 |
2-Stage Bluetooth InGaP HBT Power Amplifier
2.4 to 2.5 GHz HBT Bluetooth Power Amplifier
|
TriQuint Semiconductor,Inc.
TRIQUINT[TriQuint Semiconductor]
|
| MWS11-PH43-CS MWS11-PH41-CS |
CDMA 2000 InGaP HBT Power Amplifier
WCDMA InGaP HBT Power Amplifier
|
Microsemi
|
| GN04054N |
Gallium Arsenide Devices
|
Panasonic
|
| GN01015 |
Gallium Arsenide Devices
|
Panasonic
|
